PD57018STR-E datasheet(6/28 Pages) STMICROELECTRONICS

Part #	PD57018STR-E

Description	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

PD57018-E, PD57018S-E

6/28

2

Electrical characteristics

TCASE = +25

oC

2.1

Static

2.2

Dynamic

Table 4.

Static

Symbol

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

VGS = 0 V

IDS = 10 mA

65

V

IDSS

VGS = 0 V

VDS = 28 V

1

µA

IGSS

VGS = 20 V

VDS = 0 V

1

µA

VGS(Q)

VDS = 28 V

ID = 100 mA

2.0

4.0

V

RDS(ON)

VGS = 10 V

ID = 1.25 A

0.76

Ω

gFS

VDS = 10 V

ID = 1 A

1

mho

CISS

VGS = 0 V

VDS = 28 V

f = 1 MHz

34.5

pF

COSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

21

pF

CRSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

1.3

pF

Table 5.

Dynamic

Symbol

Test conditions

Min

Typ

Max

Unit

POUT

VDD = 28 V, IDQ = 100 mA

f = 945 MHz

18

W

GPS

VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz

14

16.5

dB

hD

VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz

50

53

%

Load

mismatch

VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz

All phase angles

10:1

VSWR

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PD57018STR-E Datasheet(PDF) 6 Page - STMicroelectronics

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