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2N2222A
High Speed Switching Transistors
Page 2
31/05/05 V1.0
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
40
V
Collector-Base Voltage
VCBO
75
Emitter-Base Voltage
VEBO
6.0
Collector Current Continuous
IC
800
mA
Power Dissipation at Ta = 25°C
Derate above 25°C
PD
500
2.28
mW
mW/°C
Power Dissipation at TC= 25°C
Derate above 25°C
PD
1.2
6.85
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
°C
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Value
Minimum
Maximum
Unit
Collector-Emitter Voltage
VCEO
IC = 10mA, IB = 0
40
-
V
Collector-Base Voltage
VCBO
IC = 10µA, IE = 0
75
-
Emitter-Base Voltage
VEBO
IE = 10µA, IC = 0
6.0
-
Collector-Cut off Current
ICBO
ICEX
VCB = 60V, IE = 0
Ta = 150°C
VCB = 60V, IE = 0
VCE = 60V, VEB = 3V
-
10
10
10
nA
µA
nA
Emitter-Cut off Current
IEBO
VEB = 3V, IC = 0
-
10
nA
Base-Cut off Current
IBL
VCE = 60V, VEB = 3V
-
20
Collector Emitter Saturation Voltage
*VCE(Sat)
IC = 150mA, IB = 15mA
-
0.3
V
IC = 500mA, IB = 50mA
-
1.0
Base Emitter Saturation Voltage
*VBE(Sat)
IC = 150mA, IB = 15mA
-
0.6-1.2
IC = 500mA, IB = 50mA
-
2.0