IRFP4004PBF datasheet(2/8 Pages) IRF

Part #	IRFP4004PBF

Description	IRFP4004PBF

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Manufacturer	IRF [International Rectifier]

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IRFP4004PbF

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Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements. Refer to App Notes (AN-1140).

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by T

Jmax, starting TJ = 25°C, L = 0.015mH

RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use

above this value.

S

D

G

I

SD ≤ 195A, di/dt ≤ 690A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

40

–––

V

∆V

(BR)DSS/

∆T

J

Breakdown Voltage Temp. Coefficient

–––

0.035

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.35

1.70

m

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

IDSS

Drain-to-Source Leakage Current

–––

20

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

nA

Gate-to-Source Reverse Leakage

–––

-200

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

290

–––

S

Qg

Total Gate Charge

–––

220

330

nC

Qgs

Gate-to-Source Charge

–––

59

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

75

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

145

–––

RG(int)

Internal Gate Resistance

–––

6.8

–––

Ω

td(on)

Turn-On Delay Time

–––

59

–––

ns

tr

Rise Time

–––

370

–––

td(off)

Turn-Off Delay Time

–––

160

–––

tf

Fall Time

–––

190

–––

Ciss

Input Capacitance

–––

8920

–––

pF

Coss

Output Capacitance

–––

2360

–––

Crss

Reverse Transfer Capacitance

–––

930

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)

i ––– 2860 –––

Coss eff. (TR) Effective Output Capacitance (Time Related)

h

–––

3110

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

350

c

A

(Body Diode)

ISM

Pulsed Source Current

–––

1390

(Body Diode)

di

VSD

Diode Forward Voltage

–––

1.3

V

trr

Reverse Recovery Time

–––

83

130

ns

TJ = 25°C

VR = 20V,

–––

78

120

TJ = 125°C

IF = 195A

Qrr

Reverse Recovery Charge

–––

190

290

nC

TJ = 25°C

di/dt = 100A/µs

g

–––

210

320

TJ = 125°C

IRRM

Reverse Recovery Current

–––

4.0

–––

A

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

ID = 195A

RG = 2.7

Ω

VGS = 10V

g

VDD = 20V

ID = 195A, VDS =0V, VGS = 10V

TJ = 25°C, IS = 195A, VGS = 0V

g

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5mA

d

VGS = 10V, ID = 195A

g

VDS = VGS, ID = 250µA

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS = 20V

Conditions

VGS = 10V

g

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 32V

i

VGS = 0V, VDS = 0V to 32V

h

Conditions

VDS = 10V, ID = 195A

ID = 195A

VGS = 20V

VGS = -20V

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