SD2932

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

PRELIMINARY DATA

ν

GOLD METALLIZATION

ν

EXCELLENT THERMAL STABILITY

ν

COMMON SOURCE CONFIGURATION,

PUSH-PULL

ν

POUT = 300W MIN. WITH 15 dB GAIN @175

MHz

DESCRIPTION

The SD2932 is a gold metallized N-Channel MOS

field-effect RF power transistor. The SD2932 is

intended

for

use

in

50V

dc

large signal

applications up to 250 MHz

PIN CONNECTION

March 2000

Symbol

Parameter

Val ue

Uni t

Drain Source Voltage

125

V

Ω)

125

V

Gat e-Source Voltage

±20

V

Drain Current

40

A

Power Dissipation

500

W

Max. O perat ing Junction Temperature

+200

Storage Temperature

-65 to 150

THERMAL DATA

Junct ion-Case Thermal Resistance

0.35

Case Heatsink Thermal Resistance

∗

0.12

∗ Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

M244

epoxy sealed

®

ORDER CODE

BRANDING

SD2932

TSD2932

1. Drain

3. Source

2. Gate

1/13