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BYT03-400 Datasheet(PDF) 4 Page - STMicroelectronics |
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BYT03-400 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 5 page BYT03-400 4/5 0 20 40 60 80 100 120 140 160 180 200 0 1020 3040 5060 7080 90 100 dIF/dt(A/µs) IF=3A Tj=100°C tfr(ns) Fig. 7: Forward recovery time versus dIF/dt (90% confidence). 0 2 4 6 8 10 12 0 10 2030 405060 7080 90 100 dIF/dt(A/µs) IF=3A Tj=100°C VFP(V) Fig. 8. Transient peak forward voltage versus dIF/dt (90% confidence). 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 dIF/dt(A/µs) IF=3A VR=200V Tj=100°C Tj=25°C IRM(A) Fig. 9: Peak reverse recovery current versus dIF/dt (90% confidence). 100 150 200 250 300 25 50 75 100 125 150 Tj(°C) IRM Qrr trr IF=3A dIF/dt=-50A/µs VR=30V % Fig. 10: Dynamic parameters versus junction temperature. 0 5 10 15 20 25 30 35 40 45 50 55 60 65 1 10 100 1000 Number of cycles Tj initial=25°C IFSM(A) Fig. 11: Non repetitive surge peak current versus number of cycles. |
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