CHA3666

RoHS COMPLIANT

Ref. : DSCHA3666-8108 - 17 Apr 08

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

6-17GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA3666 is a two-stage self biased

wide band monolithic low noise amplifier.

The circuit is manufactured with a standard

pHEMT process: 0.25µm gate length, via

holes through the substrate, air bridges and

electron beam gate lithography.

Main Features

■ Broadband performance 6-17GHz

■ 1.8dB noise figure

■ 26dBm 3

■ 17dBm power at 1dB compression

■ 21dB gain

■ Low DC power consumption

VD1

VD2

RFin

RFout

P1

P2

N2

UMS

VD1

VD2

RFin

RFout

P1

P2

N2

UMS

Main Characteristics

Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND

Symbol

Parameter

Min

Typ

Max

Unit

NF

Noise figure

1.8

2

dB

G

Gain

19

21

dB

IP3

3rd order intercept point

26

dBm

ESD Protections: Electrostatic discharge sensitive device observe handling precautions!

0,0

2,0

4,0

6,0

8,0

10,0

12,0

14,0

16,0

18,0

20,0

22,0

24,0

4,00

6,00

8,00

10,00

12,00

14,00

16,00

18,00

Gain

NF