CHE1260-QAG

RoHS COMPLIANT

Ref : DSCHE1260-QAG8057 - 22 Feb 08

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

12-27GHz Bidirectionnal Detector

GaAs Monolithic Microwave IC in SMD leadless package

Description

The

CHE1260-QAG

is

a

bidirectionnal

detector

that

integrates

a

passive

bidirectionnal coupler, two matched detector

diodes and two reference diodes.

It allows the measurement of transmitted and

reflected power. It is designed for a wide

range of applications where an accurate

transmitted

power

control

is

required,

typically

commercial

communication

systems.

The circuit is manufactured with a Schottky

diode MMIC process, 1µm gate length, via

holes through the substrate and air bridges.

It is supplied in leadless SMD package.

Main Features

■ Bidirectionnal detection

■ 30dB dynamic range

■ ESD protected

■ 16L-QFN3x3 SMD package

Main Characteristics

Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)

Symbol

Parameter

Min

Typ

Max

Unit

F

Frequency range

12

27

GHz

IL

Insertion Loss

1

dB

Dr

Dynamic Range

30

dB

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Vdet_I

RF_in

RF_out

Vref_I

Vdet_R

Vref_R DC_R

DC_I

Vdet_I

RF_in

RF_out

Vref_I

Vdet_R

Vref_R DC_R

DC_I

Vdet_I

RF_in

RF_out

Vref_I

Vdet_R

Vref_R DC_R

DC_I

Vdet_I

RF_in

RF_out

Vref_I

Vdet_R

Vref_R DC_R

DC_I

Incident power detection (mV)

10

100

1000

10000

-20 -18 -16 -14 -12 -10 -8

-6

-4

-2

0

2

4

6

8

10 12 14 16 18 20

Incident power (dBm)

12GHz

17GHz

22GHz

27GHz