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STB21NM50N-1 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB21NM50N-1 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 18 page STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Electrical characteristics 5/18 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 18 72 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Forward on voltage ISD = 18A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A, di/dt=100A/µs VDD = 100V, (see Figure 17.) 360 5 27 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A, di/dt=100A/µs VDD = 100V, Tj = 150°C (see Figure 17.) 464 6.5 27 ns µC A |
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Similar Description - STB21NM50N-1 |
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