SUD50N04-25P datasheet(2/3 Pages) VISHAY

Part #	SUD50N04-25P

Description	N-Channel 40-V (D-S) 175°C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model SUU/SUD50N04-25P

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.5

V

On-State Drain Current

a

ID(on)

VDS ≥ 5 V, VGS = 10 V

494

A

VGS = 10 V, ID = 15 A

0.018

0.016

Drain-Source On-State Resistance

a

rDS(on)

VGS = 4.5 V, ID = 10 A

0.021

0.020

Ω

Forward Voltage

a

VSD

IS = 10 A

0.86

0.87

V

Forward Transconductance

a

gfs

VDS =15V, ID = 15 A

31

42

S

Dynamic

b

Input Capacitance

Ciss

1376

1195

Output Capacitance

Coss

152

150

Reverse Transfer Capacitance

Crss

VDS = 20 V, VGS = 0 V, f = 1 MHz

68

80

pF

VDS = 20 V, VGS = 10 V, ID = 30 A

22

25

Total Gate Charge

c

Qg

11

11.4

Gate-Source Charge

c

Qgs

3.2

Gate-Drain Charge

c

Qgd

VDS = 20 V, VGS = 4.5 V, ID = 30 A

4.2

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

2

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Document Number: 74356

S-62520

Rev. A, 18-Dec-06

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