TMS418169A, TMS428169A

1048576 BY 16-BIT EXTENDED DATA OUT

DYNAMIC RANDOM-ACCESS MEMORIES

SMKS892C – AUGUST 1996 – REVISED SEPTEMBER 1997

9

POST OFFICE BOX 1443

capacitance

over recommended ranges of supply voltage and ambient temperature,

f = 1 MHz (see Note 3)

PARAMETER

MIN

MAX

UNIT

Ci(A)

Input capacitance, A0 – A9

5

pF

Ci(OE)

Input capacitance, OE

7

pF

Ci(RC)

Input capacitance, xCAS and RAS

7

pF

Ci(W)

Input capacitance, W

7

pF

CO

Output capacitance†

7

pF

† xCAS and OE = VIH to disable outputs

switching characteristics over recommended ranges of supply voltage and ambient temperature

(see Note 4)

PARAMETER

’418169A - 50

’418169A - 60

’428169A -60

’418169A - 70

’428169A-70

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

tAA

Access time from column address (see Note 5)

25

30

35

ns

tCAC

Access time from xCAS (see Note 5)

13

15

18

ns

tCPA

Access time from xCAS precharge (see Note 5)

28

35

40

ns

tRAC

Access time from RAS (see Note 5)

50

60

70

ns

tOEA

Access time from OE (see Note 5)

13

15

18

ns

tCLZ

Delay time, xCAS to output in the low-impedance state

0

0

0

ns

tOEZ

Output buffer turnoff delay from OE (see Note 6)

3

13

3

15

3

18

ns

tREZ

Output buffer turnoff delay from RAS (see Note 6)

3

13

3

15

3

18

ns

tCEZ

Output buffer turnoff delay from xCAS (see Note 6)

3

13

3

15

3

18

ns

tWEZ

Output buffer turnoff delay from W (see Note 6)

3

13

3

15

3

18

ns

NOTES:

4. With ac parameters, it is assumed that tT = 2 ns.

5. Access times for TMS428169A are measured with output reference levels of VOH = 2 V and VOL = 0.8 V.

6. The MAX specifications of tREZ , tCEZ , tWEZ,and tOEZarespecifiedwhentheoutputisnolongerdriven.Data-inshouldnotbedriven

until one of the applicable maximum specifications is satsified.

EDO timing requirements (see Note 4)

’418169A - 50

’418169A - 60

’428169A-60

’418169A - 70

’428169A -70

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

tHPC

Cycle time, EDO page-mode read or write

20

25

30

ns

tPRWC

Cycle time, EDO read-write

57

68

78

ns

tCSH

Delay time, RAS active to xCAS precharge

40

48

58

ns

tCHO

Hold time, OE from xCAS

7

10

10

ns

tDOH

Hold time, output from xCAS active

5

5

5

ns

tCAS

Pulse duration, xCAS active (see Note 7)

8

10 000

10

10 000

12

10 000

ns

tWPE

Pulse duration, W (output disable only)

7

7

7

ns

tCP

Pulse duration, xCAS precharge

8

10

10

ns

tOCH

Setup time, OE before xCAS

8

10

10

ns

tOEP

Precharge time, OE (output disable only)

5

5

5

ns

NOTES:

4. With ac parameters, it is assumed that tT = 2 ns.

7. In a read-write cycle, tCWD and tCWL must be observed.