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TMS418169A Datasheet(PDF) 9 Page - Texas Instruments |
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TMS418169A Datasheet(HTML) 9 Page - Texas Instruments |
9 / 29 page TMS418169A, TMS428169A 1048576 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS892C – AUGUST 1996 – REVISED SEPTEMBER 1997 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 capacitance over recommended ranges of supply voltage and ambient temperature, f = 1 MHz (see Note 3) PARAMETER MIN MAX UNIT Ci(A) Input capacitance, A0 – A9 5 pF Ci(OE) Input capacitance, OE 7 pF Ci(RC) Input capacitance, xCAS and RAS 7 pF Ci(W) Input capacitance, W 7 pF CO Output capacitance† 7 pF † xCAS and OE = VIH to disable outputs NOTE 3: VCC = 5 V ± 0.5 V or 3.3 V ± 0.3 V, and the bias on pins under test is 0 V. switching characteristics over recommended ranges of supply voltage and ambient temperature (see Note 4) PARAMETER ’418169A - 50 ’418169A - 60 ’428169A -60 ’418169A - 70 ’428169A-70 UNIT MIN MAX MIN MAX MIN MAX tAA Access time from column address (see Note 5) 25 30 35 ns tCAC Access time from xCAS (see Note 5) 13 15 18 ns tCPA Access time from xCAS precharge (see Note 5) 28 35 40 ns tRAC Access time from RAS (see Note 5) 50 60 70 ns tOEA Access time from OE (see Note 5) 13 15 18 ns tCLZ Delay time, xCAS to output in the low-impedance state 0 0 0 ns tOEZ Output buffer turnoff delay from OE (see Note 6) 3 13 3 15 3 18 ns tREZ Output buffer turnoff delay from RAS (see Note 6) 3 13 3 15 3 18 ns tCEZ Output buffer turnoff delay from xCAS (see Note 6) 3 13 3 15 3 18 ns tWEZ Output buffer turnoff delay from W (see Note 6) 3 13 3 15 3 18 ns NOTES: 4. With ac parameters, it is assumed that tT = 2 ns. 5. Access times for TMS428169A are measured with output reference levels of VOH = 2 V and VOL = 0.8 V. 6. The MAX specifications of tREZ , tCEZ , tWEZ,and tOEZarespecifiedwhentheoutputisnolongerdriven.Data-inshouldnotbedriven until one of the applicable maximum specifications is satsified. EDO timing requirements (see Note 4) ’418169A - 50 ’418169A - 60 ’428169A-60 ’418169A - 70 ’428169A -70 UNIT MIN MAX MIN MAX MIN MAX tHPC Cycle time, EDO page-mode read or write 20 25 30 ns tPRWC Cycle time, EDO read-write 57 68 78 ns tCSH Delay time, RAS active to xCAS precharge 40 48 58 ns tCHO Hold time, OE from xCAS 7 10 10 ns tDOH Hold time, output from xCAS active 5 5 5 ns tCAS Pulse duration, xCAS active (see Note 7) 8 10 000 10 10 000 12 10 000 ns tWPE Pulse duration, W (output disable only) 7 7 7 ns tCP Pulse duration, xCAS precharge 8 10 10 ns tOCH Setup time, OE before xCAS 8 10 10 ns tOEP Precharge time, OE (output disable only) 5 5 5 ns NOTES: 4. With ac parameters, it is assumed that tT = 2 ns. 7. In a read-write cycle, tCWD and tCWL must be observed. |
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