BQ24150YFFT datasheet(4/39 Pages) TI

Part #	BQ24150YFFT

Description	Fully Integrated Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and USB-OTG Support

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Manufacturer	TI [Texas Instruments]

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RECOMMENDED OPERATING CONDITIONS

ELECTRICAL CHARACTERISTICS

bq24150

bq24151

SLUS824 – JUNE 2008 ...................................................................................................................................................................................................... www.ti.com

MIN

NOM

MAX

UNIT

VBUS

Supply voltage, VBUS

4

6(1)

V

TJ

Operating junction temperature range

0

+125

°C

(1)

The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOST or SW pins. A tight

layout minimizes switching noise.

Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (charger mode operation), TJ = 0°C to 125°C, TJ = 25°C for

typical values (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT CURRENTS

VBUS > VBUS(min), PWM switching

10

mA

VBUS > VBUS(min), PWM NOT switching

5

0°C < TJ < 85°C, VBUS = 5 V, HZ_MODE = 1,

V(AUXPWR) > V(LOWV), SCL, SDA, OTG = 0 V or

20

µA

I(VBUS)

VBUS supply current control

1.8 V

0°C < TJ < 85°C, VBUS = 5 V, HZ_MODE = 1,

V(AUXPWR) < V(LOWV), 32S mode, SCL, SDA, OTG

35

µA

= 0 V or 1.8 V

Leakage current from battery to

0°C < TJ < 85°C, V(AUXPWR) = 4.2 V, High

Ilkg

5

µA

VBUS pin

Impedance mode

Battery discharge current in High

0°C < TJ < 85°C, V(AUXPWR) = 4.2 V, High

Impedance mode, (CSIN,

Impedance mode

20

µA

CSOUT, AUXPWR, SW pins)

SCL, SDA, OTG = 0 V or 1.8 V

VOLTAGE REGULATION

V(OREG)

Output charge voltage

Operating in voltage regulation, programmable

3.5

4.44

V

TA = 25°C

–0.5%

0.5%

Voltage regulation accuracy

±1%

CURRENT REGULATION (FAST CHARGE)

V(LOWV) ≤ V(AUXPWR) < V(OREG), VBUS > V(SLP),

550

IO(CHARGE)

Output charge current

1250

mA

R(SNS) = 68 mΩ Programmable

Regulation accuracy for charge

20 mV

≤ V(IREG) ≤ 40 mV

–5%

5%

current across R(SNS)

40 mV < V(IREG)

–3%

3%

V(IREG) = IO(CHARGE) × R(SNS)

WEAK BATTERY DETECTION

V(LOWV)

Weak battery voltage threshold

Programmable

3.4

3.7

V

Weak battery voltage accuracy

–5%

5%

Hysteresis for V(LOWV)

Battery voltage falling

100

mV

Deglitch time for weak battery

Rising voltage, 2-mV over drive, tRISE = 100 ns

30

ms

threshold

OTG PIN LOGIC LEVEL

VIL

Input low threshold level

0.4

V

VIH

Input high threshold level

1.3

V

CHARGE TERMINATION DETECTION

Termination charge current

V(AUXPWR) > V(OREG) – V(RCH),

mA

I(TERM)

50

400

VBUS > V(SLP), R(SNS) = 68 mΩ Programmable

Deglitch time for charge

Both rising and falling, 2-mV overdrive, tRISE, tFALL

30

ms

termination

= 100 ns

Voltage regulation accuracy for

3 mV

≤ V(IREG_TERM) < 20 mV

–25%

25%

termination current across R(SNS)

20 mV

≤ V(IREG_TERM) ≤ 40 mV

–5%

5%

V(IREG_TERM) = IO(TERM) × R(SNS)

INPUT POWER SOURCE DETECTION

Input voltage lower limit

Input power source detection

3.6

3.8

4

V

Deglitch time for VBUS rising

ms

VIN(min)

Rising voltage, 2-mV overdrive, tRISE = 100 ns

30

above VIN(min)

Hysteresis for VIN(min)

Input voltage rising

100

200

mV

tINT

Detection Interval

Input power source detection

2

S

4

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