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ESDALC6V1PX Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1PX Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics ESDALC6V1Px 2/9 1 Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP (1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Peak pulse voltage IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge ±8 ±15 kV PPP Peak pulse power (8/20 µs)(1) Tj initial = Tamb 30 W Tj Junction temperature 150 °C Tstg Storage temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Top Operating temperature range -40 to +150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop C Capacitance Rd Dynamic resistance Order code VBR@ IR IRM @ VRM Rd αTC min. max. typ. max. typ. typ. typ.@ 3V V V mA nA µA V Ω 10-4/°C pF ESDALC6V1P3 ESDALC6V1P5 ESDALC6V1P6 6.1 7.2 1 10 0.1 3 1.5 4.5 7.5 V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd |
Similar Part No. - ESDALC6V1PX_08 |
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Similar Description - ESDALC6V1PX_08 |
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