PA102FMG datasheet(1/5 Pages) ETC2

Part #	PA102FMG

Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor

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P-Channel Logic Level Enhancement

Mode Field Effect Transistor (Preliminary)

PA102FMG

SOT-23

Lead-Free

NIKO-SEM

1

Mar-25-2005

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±12

V

TC = 25 °C

-3

Continuous Drain Current

TC = 70 °C

ID

-1.4

Pulsed Drain Current

1

IDM

-10

A

TC = 25 °C

1.25

Power Dissipation

TC = 70 °C

PD

0.8

W

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RθJA

166

°C / W

1Pulse width limited by maximum junction temperature.

2Duty cycle

≤ 1%

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250

µA

-20

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250

µA

-0.45

-0.8

-1.2

V

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±12V

±100

nA

VDS = -16V, VGS = 0V

-1

Zero Gate Voltage Drain Current

IDSS

VDS = -16V, VGS = 0V, TJ = 125 °C

-10

µA

On-State Drain Current

1

ID(ON)

VDS = -5V, VGS = -4.5V

-6

A

VGS = -2.5V, ID =-1A

150

215

VGS = -4.5V, ID = -2A

98

118

Drain-Source On-State Resistance

1

RDS(ON)

VGS = -10V, ID = -2A

72

85

mΩ

Forward Transconductance

1

gfs

VDS = -5V, ID = -2A

16

S

1 :GATE

2 :DRAIN

3 :SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

-20

118mΩ

-3A

G

S

D

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