MTD9N10E datasheet(6/12 Pages) ONSEMI

Part #	MTD9N10E

Description	POWER MOSFET 9 AMPS, 100 VOLTS

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Manufacturer	ONSEMI [ON Semiconductor]

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MTD9N10E

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6

SAFE OPERATING AREA

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

1.0

100

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.1

1.0

10

100

0.01

0

25

50

75

100

125

10

24

ID = 9 A

32

150

Figure 13. Thermal Response

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

100 µs

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 20 V

SINGLE

PULSE

TC = 25°C

1 ms

10 ms

1.0E-05

0.1

1.0

0.01

40

t, TIME (s)

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

dc

D = 0.5

10 µs

16

8

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

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MTD9N10E Datasheet(PDF) 6 Page - ON Semiconductor

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