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MBRB1545CTG Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRB1545CTG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBRB1545CT http://onsemi.com 2 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 167°C) Total Device IF(AV) 7.5 15 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 166°C) IFRM 15 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance − Junction to Case − Junction to Ambient (Note 2) RqJC RqJA 2.0 50 °C/W ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) (iF = 7.5 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 25°C) VF 0.57 0.72 0.84 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 15 0.1 mA 2. When mounted using minimum recommended pad size on FR−4 board. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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