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ONET8531T Datasheet(PDF) 1 Page - Texas Instruments |
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ONET8531T Datasheet(HTML) 1 Page - Texas Instruments |
1 / 15 page 1 FEATURES APPLICATIONS DESCRIPTION ONET8531T SLLS891 – FEBRUARY 2008 www.ti.com 11.3 Gbps Limiting Transimpedance Amplifier With RSSI • SONET OC-192 • 10 GHz Bandwidth • SFP+ Optical Receivers • 4.5 kΩ Differential Small Signal • 10× Fibre Channel Optical Receivers Transimpedance • 10G Ethernet Receivers • 2.5 mA p-p Input Overload Current • PIN Preamplifier-Receivers • Received Signal Strength Indication (RSSI) • APD Preamplifier Receivers • 100 mW Typical Power Dissipation • CML Data Outputs With On-Chip 50 Ω Back-Termination • On Chip Supply Filter Capacitor • Single 3.3 V Supply • Die Size: 945 × 1200 µm • Case temperature operation: –40°C to 100°C The ONET8531T is a high-speed and high-gain limiting-transimpedance amplifier, used in optical receivers with data rates up to 12.5 Gbps. It features low input referred noise, 10 GHz bandwidth, 4.5 k Ω small signal transimpedance, and a received signal strength indicator (RSSI). The ONET8531T is available in die form, includes an on-chip VCC bypass capacitor and is optimized for packaging in a TO can. The ONET8531T requires a single +3.3V ± 10% supply and its power efficient design typically dissipates less than 105 mW. The device is characterized for operation from –40 °C to 100°C case (IC back side) temperature. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2008, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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