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ADF4360-1BCP Datasheet(PDF) 6 Page - Analog Devices

Part # ADF4360-1BCP
Description  Integrated Synthesizer and VCO
Download  24 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADF4360-1BCP Datasheet(HTML) 6 Page - Analog Devices

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ADF4360-1
ABSOLUTE MAXIMUM RATINGS
Table 3. TA = 25°C, unless otherwise noted.
Parameter
Rating
AVDD to GND*
−0.3 V to +3.9 V
AVDD to DVDD
−0.3 V to +0.3 V
VVCO to GND
−0.3 V to +3.9 V
VVCO to AVDD
−0.3 V to +0.3 V
Digital I/O Voltage to GND
−0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
−0.3 V to VDD + 0.3 V
REFIN to GND
−0.3 V to VDD + 0.3 V
Operating Temperature Range
Maximum Junction Temperature
150°C
CSP θJA Thermal Impedance
(Paddle Soldered)
50°C/W
(Paddle Not Soldered)
88°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
*GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect device
reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 24


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