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MMBT2907A Datasheet(PDF) 2 Page - TAITRON Components Incorporated

Part # MMBT2907A
Description  SMD General Purpose Transistor (PNP)
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Manufacturer  TAITRON [TAITRON Components Incorporated]
Direct Link  http://www.taitroncomponents.com
Logo TAITRON - TAITRON Components Incorporated

MMBT2907A Datasheet(HTML) 2 Page - TAITRON Components Incorporated

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Rev. A/AH 2007-10-11
MMBT2907A
SMD General Purpose Transistor (PNP)
www.taitroncomponents.com
Page 2 of 3
Electrical Characteristics (T
Ambient=25ºC unless noted otherwise)
Symbol
Description
Min.
Max.
Unit
Conditions
75
-
-VCE=10V, -IC=0.1mA
100
-VCE=10V, -IC=1mA
100
-
-VCE=10V, -IC=10mA
100
300
-VCE=10V, -IC=150mA
hFE
D.C. Current Gain
50
-
-VCE=10V, -IC=500mA
-
10
nA
-VCB=50V, IE=0
-ICBO
-
10
µA
-VCB=50V, IE=0, Tj=125° C
-ICEX
Collector Cut–Off Current
-
50
nA
-VEB=0.5V, -VCE=30V
-IBEX
Base Current with Reverse Biased Emitter
Junction
-
50
nA
-VEB=3V, -VCE=30V
-
0.4
-IC=150mA, -IB=15mA
-VCEsat
Collector-Emitter Saturation Voltage
-
1.6
V
-IC=500mA, -IB=50mA
-
1.3
-IC=150mA, -IB=15mA
-VBEsat
Base-Emitter Saturation Voltage
-
2.6
V
-IC=500mA, -IB=50mA
-V(BR)CEO
Collector-Emitter Breakdown Voltage
60
-
V
-IC=10mA, IB=0
-V(BR)CBO
Collector-Base Breakdown Voltage
60
-
V
-IC=10µA, IE=0
-V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
-
V
-IE=10µA, IC=0
fT
Current Gain-Bandwidth Product
200
-
MHz
-VCE=20V, -IC=50mA,
f=100MHz
Co
Output Capacitance
-
8.0
pF
-VCB=10V, f=1.0MHz,
IE=0
Ci
Input Capacitance
-
30
pF
-VEB=2.0V, f=1.0MHz,
IC=0
ton
Turn on Time
-
45
td
Delay Time
-
10
tr
Rise Time
-
40
ns
-IB=15mA
-IC=150mA
-VCC=30V
toff
Turn-Off Time (ts + tf)
-
100
ts
Storage Time
-
80
tf
Fall Time
-
30
ns
-IB=15mA
-IC=150mA
-VCC=6V


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