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MMBT2907A Datasheet(PDF) 2 Page - TAITRON Components Incorporated |
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MMBT2907A Datasheet(HTML) 2 Page - TAITRON Components Incorporated |
2 / 3 page Rev. A/AH 2007-10-11 MMBT2907A SMD General Purpose Transistor (PNP) www.taitroncomponents.com Page 2 of 3 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Max. Unit Conditions 75 - -VCE=10V, -IC=0.1mA 100 -VCE=10V, -IC=1mA 100 - -VCE=10V, -IC=10mA 100 300 -VCE=10V, -IC=150mA hFE D.C. Current Gain 50 - -VCE=10V, -IC=500mA - 10 nA -VCB=50V, IE=0 -ICBO - 10 µA -VCB=50V, IE=0, Tj=125° C -ICEX Collector Cut–Off Current - 50 nA -VEB=0.5V, -VCE=30V -IBEX Base Current with Reverse Biased Emitter Junction - 50 nA -VEB=3V, -VCE=30V - 0.4 -IC=150mA, -IB=15mA -VCEsat Collector-Emitter Saturation Voltage - 1.6 V -IC=500mA, -IB=50mA - 1.3 -IC=150mA, -IB=15mA -VBEsat Base-Emitter Saturation Voltage - 2.6 V -IC=500mA, -IB=50mA -V(BR)CEO Collector-Emitter Breakdown Voltage 60 - V -IC=10mA, IB=0 -V(BR)CBO Collector-Base Breakdown Voltage 60 - V -IC=10µA, IE=0 -V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - V -IE=10µA, IC=0 fT Current Gain-Bandwidth Product 200 - MHz -VCE=20V, -IC=50mA, f=100MHz Co Output Capacitance - 8.0 pF -VCB=10V, f=1.0MHz, IE=0 Ci Input Capacitance - 30 pF -VEB=2.0V, f=1.0MHz, IC=0 ton Turn on Time - 45 td Delay Time - 10 tr Rise Time - 40 ns -IB=15mA -IC=150mA -VCC=30V toff Turn-Off Time (ts + tf) - 100 ts Storage Time - 80 tf Fall Time - 30 ns -IB=15mA -IC=150mA -VCC=6V |
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