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EM6161FS8AW-45LF Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc |
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EM6161FS8AW-45LF Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc |
4 / 11 page EM611FV16 Series Low Power, 64Kx16 SRAM 4 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. DC AND OPERATING CHARACTERISTICS NOTES 1. Typical values are measured at Vcc=3.3V, T A=25 oC and not 100% tested. Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=VSS to VCC -1 - 1 µA Output leakage current ILO CS=VIH or OE=VIH or WE=VIL, LB=UB=VIH , VIO=VSS to VCC -1 - 1 µA Operating power supply ICC IIO=0mA, CS=VIL, VIN=VIH or VIL - - 3 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, I IO =0mA, CS<0.2V, LB<0.2V or/and UB<0.2V, VIN<0.2V or VIN>VCC-0.2V - - 3 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS=VIL, LB=VIL or/and UB=VIL, VIN=VIL or VIH 55ns - - 26 mA 70ns - - 20 Output low voltage VOL IOL = 2.1mA - - 0.4 V Output high voltage VOH IOH = -1.0mA 2.4 - - V Standby Current (TTL) ISB CS=VIH, LB=UB =VIH Other inputs=VIH or VIL - - 0.3 mA Standby Current (CMOS) ISB1 CS>VCC-0.2V(CS controlled) or LB=UB ≥ V CC-0.2V, CS<0.2V(LB/UB Controlled) Other inputs=0~VCC (Typ. condition : VCC=3.3V @ 25 oC) (Max. condition : VCC=3.6V @ 85 oC) LL LF - 0.5 1) 5 µA RECOMMENDED DC OPERATING CONDITIONS 1) 1. TA= -40 to 85oC, otherwise specified 2. Overshoot: VCC +2.0 V in case of pulse width < 20ns 3. Undershoot: -2.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested . Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.3 3.6 V Ground VSS 0 0 0 V Input high voltage VIH 2.2 - VCC + 0.2 2) V Input low voltage V IL -0.23) - 0.6 V CAPACITANCE1) (f =1MHz, TA=25 oC) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance C IN V IN=0V - 8 pF Input/Ouput capacitance C IO V IO =0V - 10 pF |
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