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EM6320FR16EW-70L Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc |
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EM6320FR16EW-70L Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc |
2 / 11 page EM610FV8T Series Low Power, 128Kx8 SRAM 2 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. FEATURES • Process Technology : 0.18 µm Full CMOS • Organization : 128K x 8 bit • Power Supply Voltage : 2.7V ~ 3.6V • Low Data Retention Voltage : 1.5V(Min) • Three state output and TTL Compatible • Package Type : 32-TSOP1 GENERAL DESCRIPTION The EM610FV8T families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The fami- lies also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Typ) Operating (ICC1.Max) EM610FV8T Industrial (-40 ~ 85 o C) 2.7V~3.6V 55 1) / 70ns 0.5 µA2) 3 mA 32-TSOP1 Name Function Name Function CS1,CS2 Chip select inputs WE Write Enable input OE Output Enable input Vcc Power Supply A0~A16 Address Inputs Vss Ground I/O1~I/O 8 Data Inputs/outputs NC No Connection FUNCTIONAL BLOCK DIAGRAM 1. The parameter is measured with 30pF test load. PIN DESCRIPTION 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 WE CS2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 OE A10 CS1 IO8 IO7 IO6 IO5 IO4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 32 - TSOP Type1 - Forward I/O Circuit Column Select Data Cont Pre-charge Circuit Memory Array 1024 x 1024 A1 A2 A3 A4 A5 A6 A7 A0 A8 A9 A10 A11 A12 A13 A14 A15 WE OE CS1 I/O1 ~ I/O8 VCC VSS Control Logic A16 CS2 2. Typical values are measured at Vcc=3.3V, TA=25 oC and not 100% tested. |
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