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FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• UV enhanced
• High shunt resistance
• High response
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
75
V
TSTG
Storage Temperature
-55
+150
°C
TO
Operating Temperature
-40
+125
°C
TS
Soldering Temperature*
+240
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
VR = 10mV
10
50
pA
RSH
Shunt Resistance
VR = 10 mV
200
1000
MW
CJ
Junction Capacitance
VR = 0 V, f = 1 MHz
2000
pF
lrange
Spectral Application Range
Spot Scan
350
1100
nm
R
Responsivity
l= 254 nm V, VR = 0 V
0.07
0.09
VBR
Breakdown Voltage
I = 10 μA
30
50
V
NEP
Noise Equivalent Power
VR = 0V @ l=Peak
2 x10
-14
W/ √ Hz
RL = 50 Ω,VR = 0 V
190
tr
Response Time**
RL = 50 Ω,VR = 10 V
13
nS
SPECTRAL RESPONSE
0.00
0.10
0.20
0.30
0.40
0.50
0.60
Wavelength (nm)
UV Enhanced Silicon Photodiode
PDU-V114
PACKAGE DIMENSIONS INCH [mm]
TO-5 PACKAGE
The PDU-V114 is a UV enhanced silicon PIN
packaged in a hermetic TO-5 metal package.
• Instrumentation
• Industrial
• Medical
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
TO-5 PACKAGE
.236 [5.99]
.136 [3.45]
.224 [5.69]
.124 [3.15]
ACTIVE AREA
ACTIVE AREA
Ø.362 [9.19]
Ø.357 [9.07]
63°
VIEWING
ANGLE
Ø.245 [6.22]
Ø.255 [6.48]
Ø.320 [8.13]
Ø.330 [8.38]
2X .50 [12.7] MIN
45°
ANODE
CATHODE
.200 [5.08]
2X Ø.018 [0.46]
.010 [0.25] MAX
GLASS ABOVE CAP TOP EDGE
.075 [1.91]
.168 [4.27]