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EM6160FS32AW10LL Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc |
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EM6160FS32AW10LL Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc |
2 / 11 page EM620FU16 Series Low Power, 128Kx16 SRAM 2 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. 1 2 3 4 5 6 A LB OE A0 A1 A2 CS2 B I/O 9 UB A 3 A 4 CS 1 I/O 1 C I/O10 I/O11 A5 A6 I/O2 I/O3 D VSS I/O12 DNU A7 I/O4 VCC E VCC I/O13 DNU A16 I/O5 VSS F I/O 15 I/O 14 A 14 A 15 I/O 6 I/O 7 G I/O 16 DNU A 12 A 13 WE I/O 8 H DNU A8 A9 A10 A11 DNU FEATURES • Process Technology : 0.18 µm Full CMOS • Organization :128K x 16 bit • Power Supply Voltage : 2.7V ~ 3.3V • Low Data Retention Voltage : 1.5V(Min.) • Three state output and TTL Compatible • Package Type : 48-FPBGA 6.0x7.0 GENERAL DESCRIPTION The EM620FU16 families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The fami- lies also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Typ.) Operating (ICC1.Max.) EM620FU16 Industrial (-40 ~ 85 oC) 2.7V~3.3V 55 1)/70ns 1 µA 2 mA 48-FPBGA Name Function Name Function CS1,CS 2 Chip select inputs Vcc Power Supply OE Output Enable input Vss Ground WE Write Enable input UB Upper Byte (I/O 9~16) A0~A16 Address Inputs LB Lower Byte (I/O 1~8) I/O1~I/O 16 Data Inputs/outputs DNU Do Not Use I/O Circuit Column Select Data Cont Data Cont Pre-charge Circuit Memory Array 1024 x 2048 A1 A2 A3 A4 A5 A6 A7 A0 A8 A9 A10 A11 A12 A13 A14 A15 A16 WE OE UB LB CS1 CS2 I/O1 ~ I/O8 I/O9 ~ I/O16 VCC VSS Control Logic FUNCTIONAL BLOCK DIAGRAM 1. The parameter is measured with 30pF test load. PIN DESCRIPTION 48-FPBGA : Top view (ball down) |
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