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EM6161V32AT-55L Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc |
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EM6161V32AT-55L Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc |
2 / 11 page EM610FV16 Series Low Power, 64Kx16 SRAM 2 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. 1 2 3 4 5 6 A LB OE A0 A1 A2 CS2 B I/O 9 UB A 3 A 4 CS 1 I/O 1 C I/O10 I/O11 A5 A6 I/O2 I/O3 D VSS I/O12 DNU A7 I/O4 VCC E VCC I/O13 DNU DNU I/O5 VSS F I/O 15 I/O 14 A 14 A 15 I/O 6 I/O 7 G I/O 16 DNU A 12 A 13 WE I/O 8 H DNU A8 A9 A10 A11 DNU FEATURES • Process Technology : 0.18 µm Full CMOS • Organization : 64K x 16 bit • Power Supply Voltage : 2.7V ~ 3.6V • Low Data Retention Voltage : 1.5V(Min.) • Three state output and TTL Compatible • Package Type : 48-FPBGA 6.0x7.0 GENERAL DESCRIPTION The EM610FV16 families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The fami- lies also supports low data retention voltage for battery back-up operation with low data retention current. 2. Typical values are measured at Vcc=3.3V, T A =25 oC and not 100% tested. PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Typ.) Operating (ICC1.Max.) EM610FV16 Industrial (-40 ~ 85 oC) 2.7V~3.6V 55 1) /70ns 0.5 µA2) 3 mA 48-FPBGA Name Function Name Function CS1,CS 2 Chip select inputs Vcc Power Supply OE Output Enable input Vss Ground WE Write Enable input UB Upper Byte (I/O9~16) A0~A15 Address Inputs LB Lower Byte (I/O1~8) I/O1~I/O16 Data Inputs/outputs DNU Do Not Use I/O Circuit Column Select Data Cont Data Cont Pre-charge Circuit Memory Array 1024 x 1024 A1 A2 A3 A4 A5 A6 A7 A0 A8 A9 A10 A11 A12 A13 A14 A15 WE OE UB LB CS1 I/O1 ~ I/O8 I/O9 ~ I/O16 VCC VSS Control Logic FUNCTIONAL BLOCK DIAGRAM 1. The parameter is measured with 30pF test load. PIN DESCRIPTION 48-FPBGA : Top view (ball down) CS2 |
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