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EM622FT16GS-45LF Datasheet(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EM622FT16GS-45LF Datasheet(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
9 / 11 page EM621FV16BU Series Low Power, 128Kx16 SRAM 9 DATA RETENTION CHARACTERISTICS NOTES 1. See the ISB1 measurement condition of data sheet page 4. 2. Typical value is measured at TA=25oC and not 100% tested. Parameter Symbol Test Condition Min Typ2) Max Unit VCC for Data Retention VDR ISB1 Test Condition (Chip Disabled) 1) 1.5 - 3.6 V Data Retention Current IDR VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) -0.5 5.0 µA Chip Deselect to Data Retention Time tSDR See data retention wave form 0- - ns Operation Recovery Time tRDR tRC -- tSDR tRDR Data Retention Mode CS > Vcc-0.2V Vcc 3.0V 2.2V VDR CS GND DATA RETENTION WAVE FORM |
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