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EM681FV16EV-85L Datasheet(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EM681FV16EV-85L Datasheet(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
9 / 11 page ![]() EM620FV8BS Series Low Power, 256Kx8 SRAM 9 DATA RETENTION CHARACTERISTICS NOTES 1. See the ISB1 measurement condition of data sheet page 4. 2. Typical value is measured at TA=25oC and not 100% tested. Parameter Symbol Test Condition Min Typ2) Max Unit VCC for Data Retention VDR ISB1 Test Condition (Chip Disabled) 1) 1.5 - 3.6 V Data Retention Current IDR VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) - 0.5 5.0 µA Chip Deselect to Data Retention Time tSDR See data retention wave form 0 - - ns Operation Recovery Time tRDR tRC - - tSDR tRDR Data Retention Mode CS1 > Vcc-0.2V Vcc 3.0V 2.2V VDR CS1 GND tSDR tRDR Data Retention Mode Vcc 3.0V CS2 VDR 0.4V CS2 < 0.2V DATA RETENTION WAVE FORM GND |
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