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STB150NF55 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB150NF55 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page 3/14 STB150NF55 STP150NF55 STW150NF55 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 27.5 V ID = 60 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 35 180 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=27.5 V ID=120A VGS= 10V 140 35 70 170 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 27.5 V ID = 60 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 140 80 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 120 480 A A VSD (*) Forward On Voltage ISD = 120 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A di/dt = 100A/µs VDD = 25 V Tj = 150°C (see test circuit, Figure 5) 130 350 7.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Thermal Impedance Safe Operating Area |
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