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RT1N241X Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

Part # RT1N241X
Description  Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

RT1N241X Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

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〈Transistor〉
RT1N241X SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
RT1N241U
RT1N241M
RT1N241C
RT1N241S
UNIT
CBO
Collector to Base voltage
50
V
EBO
Emitter to Base voltage
10
V
CEO
Collector to Emitter voltage
50
V
 C
Collector current
100
mA
 CM
Peak Collector current
200
mA
Collector dissipation(Ta=25℃)
150
200
450
mW
Tj
Junction temperature
+150
+150
Tstg
Storage temperature
-55∼+150
-55∼+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
(BR)CEO
C to E break down voltage
I
 C=100μA,RBE=∞
50
V
 CBO
Collector cut off current
V
CB=50V,I E =0
0.1
μA
FE
DC forward current gain
V
CE=5V,I C =5mA
50
CE(sat)
C to E saturation voltage
I
 C =10mA,I B =0.5mA
0.1
0.3
V
(ON)
Input on voltage
V
CE=0.2V,I C =5mA
1.8
3.0
V
(OFF)
Input off voltage
V
CE=5V,I C =100μA
0.8
1.1
V
Input resistance
16
22
28
/R
Resistance ratio
0.9
1.0
1.1
Gain band width product
V
CE=6V,I E =-10mA
200
MHz
ISAHAYA ELECTRONICS CORPORATION
Input on voltage-collector current
0.1
1
10
1
10
100
colector curent I
C(mA)
RT1N241
現行RT1N241
collector current - Input on voltage
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
Input off voltage VI
(OFF)(V)
RT1N241
現行RT1N241
DC forward gain current-collector current
10
100
1000
1
10
100
collector current I
C(mA)
RT1N241
現行RT1N241


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