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RT1N144M Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

Part # RT1N144M
Description  Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

RT1N144M Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

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〈Transistor〉
RT1N144X SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
RT1N144T
RT1N144U
RT1N144M
RT1N144C
RT1N144S
UNIT
CBO
Collector to Base voltage
50
V
EBO
Emitter to Base voltage
6
V
CEO
Collector to Emitter voltage
50
V
Collector current
100
mA
CM
Peak Collector current
200
mA
Collector dissipation(Ta=25℃)
125(※)
150
200
450
mW
Tj
Junction temperature
+125
+150
Tstg
Storage temperature
-55~+125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
(BR)CEO
C to E break down voltage
I
C=100μA,RBE=∞
50
V
CBO
Collector cut off current
V
CB=50V,I E =0
0.1
μA
FE
DC forward current gain
V
CE=5V,I C =5mA
50
CE(sat)
C to E saturation voltage
I
C =10mA,I B =0.5mA
0.1
0.3
V
I(ON)
Input on voltage
V
CE=0.2V,I C =5mA
1.0
1.8
V
I(OFF)
Input off voltage
V
CE=5V,I C =100μA
0.4
0.7
V
Input resistance
7.0
10
13
/R
Resistance ratio
4.2
4.7
5.1
Gain band width product
V
CE=6V,I E =-10mA
200
MHz
ISAHAYA ELECTRONICS CORPORATION
Input on voltage-collector current
0.1
1
10
1
10
100
collector current IC(mA)
DC forward current Gain -collector current
10
100
1000
1
10
100
collector current IC(mA)
collector current-Input off voltage
10
100
1000
0.00.4
0.81.2
1.62.0
Input off voltage VI(OFF)(V)
TYPICAL CHARACTERISTICS
VCE=0.2V
VCE=5V
VCE=5V


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