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EM616AFP8EW-85LF Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc |
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EM616AFP8EW-85LF Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc |
4 / 11 page EM640FP16 Series Low Power, 256Kx16 SRAM 4 DC AND OPERATING CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=VSS to VCC -1 - 1 uA Output leakage current ILO CS1=VIH, CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH VIO=VSS to VCC -1 - 1 uA Operating power supply ICC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL -- 2 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, I LO=0mA, CS1<0.2V, LB<0.2V or/and UB<0.2V, CS2>VCC-0.2V VIN<0.2V or VIN>VCC-0.2V -- 2 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH , LB=VIL or/and UB=VIL VIN=VIL or VIH -- 15 mA Output low voltage VOL IOL = 0.1mA -- 0.2 V Output high voltage VOH IOH = -0.1mA 1.4 - - V Standby Current (CMOS) ISB1 CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled) or 0V<CS2<0.2V (CS2 controlled), Other inputs = 0 ~ VCC (Typ. condition : VCC=1.8V @ 25 oC) (Max. condition : VCC=2.2V @ 85 oC) LL LF -1 5 uA RECOMMENDED DC OPERATING CONDITIONS 1) 1. TA= -40 to 85oC, otherwise specified 2. Overshoot: VCC +1.0 V in case of pulse width < 20ns 3. Undershoot: -1.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested . Parameter Symbol Min Typ Max Unit Supply voltage VCC 1.65 1.8 2.2 V Ground VSS 00 0 V Input high voltage VIH 1.4 - VCC + 0.3 2) V Input low voltage VIL -0.33) -0.4 V CAPACITANCE1) (f =1MHz, TA=25 oC) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V -8 pF Input/Ouput capacitance CIO VIO=0V -10 pF |
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