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EM621FS16BU-45LF Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc |
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EM621FS16BU-45LF Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc |
4 / 11 page EM641FT8T Series Low Power, 512Kx8 SRAM 4 DC ELECTRICAL CHARACTERISTICS (TA = -40oC to +85oC) NOTES : 1.Typical values are measured at Vcc=5V, TA=25oC and not 100% tested. Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=VSS to VCC -1 - 1 uA Output leakage current ILO CS=VIH or OE=VIH or WE=VIL VIO=VSS to VCC -1 - 1 uA Operating power supply ICC IIO=0mA, CS=VIL, VIN=VIH or VIL - - 5 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, IIO=0mA, CS<0.2V, VIN<0.2V or VIN>VCC-0.2V - - 7 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS=VIL, VIN=VIL or VIH 45ns - - 65 mA 55ns - - 55 70ns - - 45 Output low voltage VOL IOL = 2.1mA - - 0.4 V Output high voltage VOH IOH = -1.0mA 2.4 - - V Standby Current (TTL) ISB CS=VIH, Other inputs=VIH or VIL - - 1 mA Standby Current (CMOS) ISB1 CS>VCC-0.2V Other inputs = 0~VCC (Typ. condition : VCC=5V @ 25oC) (Max. condition : VCC=5.5V @ 85oC) LF - 1.51) 20 uA RECOMMENDED DC OPERATING CONDITIONS 1) Notes : 1. TA= -40 to 85oC, otherwise specified 2. Overshoot: VCC +1.0 V in case of pulse width < 20ns 3. Undershoot: -1.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested. Parameter Symbol Min Typ Max Unit Supply voltage VCC2) 4.5 - 5.5 V Ground VSS 0 0 0 V Input high voltage VIH 2.2 - VCC + 0.53) V Input low voltage VIL -0.54) - 0.6 V CAPACITANCE (f =1MHz, TA=25oC) Note : Capacitance is sampled, not 100% tested. Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Ouput capacitance CIO VIO=0V - 10 pF |
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