STB3NB60 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STB3NB60

Description	N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET

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STB3NB60

N - CHANNEL 600V - 3.3

Ω - 3.3A - D2PAK/I2PAK

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 3.3

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

June 1998

1

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

600

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C3.3

A

ID

Drain Current (continuous) at Tc =100

oC2.1

A

IDM(

•)

Drain Current (pulsed)

13.2

A

Ptot

Tot al Dissipation at Tc =25

oC80

W

Derating F act or

0.64

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤3.3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STB3NB60

600 V

<3. 6

Ω

3.3 A

I2PAK

TO-262

(Suffix ”-1”)

D2PAK

TO-263

(Suffix ”T4”)

1/9

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