EMC646SP16J-70LL datasheet(9/65 Pages) EMLSI

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EMC646SP16J-70LL Datasheet(PDF) 9 Page - Emerging Memory & Logic Solutions Inc

Part #	EMC646SP16J-70LL

Description	4Mx16 bit CellularRAM

Download	65 Pages

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Manufacturer	EMLSI [Emerging Memory & Logic Solutions Inc]

Direct Link	http://www.emlsi.com

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9 / 65 page

EMC646SP16J

4Mx16 CellularRAM

Preliminary

Functional Description

In general, 64M CellularRAM devices are high-density alternatives to SRAM and Pseudo SRAM products, popular in low-power,

portable applications. The 64Mb device contains a 67,108,864-bit DRAM core, organized as 4,194,304 addresses by 16 bits.The device

implements the same high-speed bus interface found on burst mode Flash products. The CellularRAM bus interface supports both

asynchronous and burst mode transfers. Page mode accesses are also included as a bandwidth-enhancing extension to the

asynchronous read protocol.

Power-Up Initialization

64M CellularRAM products include an on-chip voltage sensor used to launch the power-up initialization process. Initialization will

configure the BCR and the RCR with their default settings. (See Figure 16 and 20) Vcc and VccQ must be applied simultaneously.

When they reach a stable level at or above 1.7V, the device will require 150

µs to complete its self-initialization process. During the

initialization period, CE# should remain HIGH. When initialization is complete, the device is ready for normal operation.

Figure 2: Power-Up Initialization Timing

Vcc

VccQ

Vcc=1.7V

tPU

Device Initialization

Device ready for

normal operation

≥ 150

µs

Manufacturer	Part #	Datasheet	Description
Emerging Memory & Logic...	EMC646SP16K	507Kb / 52P	4Mx16 bit CellularRAM AD-MUX
	EMC326SP16AJ	612Kb / 64P	2Mx16 bit CellularRAM
	EMC326SP16AK	489Kb / 52P	2Mx16 bit CellularRAM AD-MUX
Samsung semiconductor	K3S7V2000M-TC	1Mb / 27P	64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
	KM23C64000T	71Kb / 4P	64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
	K3P7V1000	62Kb / 4P	64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
	K1S6416BCC	138Kb / 10P	4Mx16 bit Page Mode Uni-Transistor Random Access Memory
Infineon Technologies A...	HYE18P16161AC	641Kb / 33P	16M Asynchronous/Page CellularRAM V2.0, December 2003
Infineon Technologies A...	HYE18P32160AC	1Mb / 53P	32M Synchronous Burst CellularRAM V2.0, December 2003
Samsung semiconductor	K1S64161CC	204Kb / 10P	4Mx16 bit Page Mode Uni-Transistor Random Access Memory

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