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EMC646SP16JP-55LF Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc

Part # EMC646SP16JP-55LF
Description  4Mx16 bit CellularRAM
Download  65 Pages
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC646SP16JP-55LF Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc

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EMC646SP16J
4Mx16 CellularRAM
2
Preliminary
64Mb Async/Page/Burst CellularRAM
FEATURES
- Sigle device supports asynchrous, page and burst operation
- Vcc, VccQ voltages:
1.7V.1.95V VCC
1.7V.1.95V VCCQ
- Random access time: 70ns
- Burst mode READ and WRITE access:
4, 8, 16, or 32 words, or continuous burst
Burst wrap or sequential
Max clock rate: 104 MHz (tCLK = 9.62ns)
Burst initial latency: 38.5ns (4 clocks) @ 104 MHz ,
tACLK: 7ns @ 104 MHz
- Page mode READ access:
Sixteen-word page size
Interpage READ access : 70ns
Intrapage READ access : 20ns
- Low power consumption:
Asynchronous READ: <25mA
Initial access, burst READ:
(38.5ns [4 clocks] @ 104 MHz) <35mA
Continuous burst READ: <30mA
- Low-power features
On-chip temperature compensated self refresh (TCSR)
Partial array refresh (PAR)
Deep Power-down(DPD) mode
OPTIONS
- Configuration: 64Mb (4 megabit x 16)
- Vcc core / VccQ I/O voltage supply: 1.8V
- Timing: 70ns access
- Frequency: 83 MHz, 104 MHz
- Standby current at 85°C
Low Low Power : 140
µA(max)
Low Power
: 160
µA(max)
Standard
: 180
µA(max)
- Operating temperature range:
Wireless -30°C to +85°C


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