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EM7323SU16HZ-85LL Datasheet(PDF) 5 Page - Emerging Memory & Logic Solutions Inc

Part # EM7323SU16HZ-85LL
Description  2M x 16Bit Asynchronous / Page Mode StRAM
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM7323SU16HZ-85LL Datasheet(HTML) 5 Page - Emerging Memory & Logic Solutions Inc

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EM7323SU16H
2Mx16 Async. / Page StRAM
5
Preliminary
Rev. 0.0
DC CHARACTERISTICS(Ta = -25℃ to 85 ℃, VDD=2.6 to 3.3V) (SEE NOTE 3 to 4)
Note
*1. Max VIL of signals(i.e. A0~A20, DQ1~DQ16, CE1#, CE2, WE#, OE#, LB#, UB#) can be 0.2V to 0.616V.
*2. For deep power-down, CE2<=0.2V is essential. If max VIL of CE2 is from 0.2V to 0.616V, the (10)uA deep-power
current will not be guaranteed, and the deep-power current might go high as (15)uA.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=0 to VDD
-1
-
1
uA
Output leakage current
ILO
Output disable, VOUT= 0V to VDD
-1
-
1
uA
Operating current
IDDO1
tRC= Min, CE1=VIL , CE2=VIH , IOUT=0mA
--
25
mA
Page Access Operating
current
IDDO2
tPC = Min, CE1=VIL, CE2=VIH , IOUT=0mA,
Page add. cycling.
--
15
mA
Output high voltage
VOH
IOH = -0.5mA
0.8*VDD
--
V
Output low voltage
VOL
IOL = 1.0mA, VCC=VCCmin
--
0.15*VCCQ
V
Standby Current (CMOS)
IDDS
CE1>VDD-0.2V, CE2=VDD -0.2V
-
-
120
uA
Deep Power-down
Standby Curret
VDDSD
(*1, *2)
CE2 = 0.2V
--
10
uA
CAPACITANCE (f =1MHz, TA=25
oC)
Note : This parameter is sampled periodically and is not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=VSS
-
10
pF
Ouput capacitance
COUT
VOUT=VSS
-
10
pF


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