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EMP116MEAW-70E Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc |
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EMP116MEAW-70E Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc |
2 / 14 page EMP116MEAW Series 1Mx16 Pseudo Static RAM Preliminary Rev 0.0 1Mb x16 Pseudo Static RAM Specification GENERAL DESCRIPTION The EMP116MEAW series is 16,777,216 bits of Pseudo SRAM which uses DRAM type memory cells, but this device has refresh-free operation and extreme low power consumption technology. Furthermore the interface is compatible to a low power Asynchronous type SRAM. The EMP116MEAW is organized as 1,048,576 Words x 16 bit. FEATURES - Organization :1M x16 - Power Supply Voltage : 2.7 ~ 3.3V - Separated I/O power(VccQ) & Core power(Vcc) - Three state outputs - Byte read/write control by UB# / LB# - Support Page Read/Write operation with 16 words - Support PASR, RMS, DPD and Auto-TCSR for power saving PRODUCT FAMILY Part Number Operating Temp. Power Supply Speed (tRC) Power Dissipation Standby (ISB1, Max.) Operating (ICC2, Max.) EMP116MEAW-70E -25oC to 85oC 2.7V to 3.3V 70ns 100uA 25mA FUNCTION BLOCK DIAGRAM COLUMN SELECT I/O CIRCUIT Memory Array 1M X 16 Self-Refresh CONTROL CONTROL LOGIC ADDRESS DECODER Din/Dout BUFFER DQ0~ DQ15 A0~A19 ZZ# CS# UB# LB# WE# OE# |
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