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EMC326SP16AKU-55L Datasheet(PDF) 10 Page - Emerging Memory & Logic Solutions Inc |
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EMC326SP16AKU-55L Datasheet(HTML) 10 Page - Emerging Memory & Logic Solutions Inc |
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10 / 52 page  EMC326SP16AK 2Mx16 CellularRAM AD-MUX 10 Preliminary BUS OPERATING MODES 32Mb CelluarRAM products incorporate a burst mode interface found on Flash products targeting low-power, wireless applications. This bus interface supports asynchronous and burst mode read and write transfers. The specific interface supported is defined by the value loaded into the BCR. Asynchronous Mode Asynchronous mode uses the industry- standard SRAM control signals (CE#, ADV#, OE#, WE#, and LB#/UB#). READ operations(Fig- ure 3) are initiated by bringing CE#, ADV#, and LB#/UB# LOW while keeping OE# and WE# HIGH, and driving the address onto the A/ DQ bus. ADV# is taken HIGH to capture the address, and OE# is taken LOW. Valid data will be driven out of the I/Os after the specified access time has elapsed. WRITE operations(Figure 4 ) occur when CE#, ADV#, WE#, and LB#/UB# are driven LOW. with the address on the A/DQ bus. ADV# is taken HIGH to capture the address, then the WRITE data is driven onto the bus. During asynchronous WRITE operations, the OE# level is a “Don't Care,” and WE# will override OE#; however, OE# must be HIGH while the address is driven onto the A/DQ bus. The data to be written is latched on the rising edge of CE#, WE#, UB#, or LB# (whichever occurs first). Dur- ing asynchronous operations with burst mode enabled, the CLK input must be held static(HIGH or LOW). WAIT will be driven during asynchronous READs, and its state should be ignored. WE# LOW time must be limited to tCEM. |
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