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STB8NA50 Datasheet(PDF) 2 Page - STMicroelectronics |
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STB8NA50 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page  THERMAL DATA Rthj-ca se Rthj-amb R thc-sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead T emperature For Soldering Purpose 1 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbo l Parameter Max Valu e Unit IAR Avalanche Current, Repet itive or Not-Repetitive (pulse width limited by Tj max, δ <1%) 8A EAS Single Pulse Avalanche Energy (st arting Tj =25 oC, ID =IAR,VDD =50 V) 350 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1%) 11 mJ IAR Avalanche Current, Repet itive or Not-Repetitive (Tc =100 oC, pulse width limited by T j max , δ <1%) 5.3 A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symbo l Parameter T est Con ditio ns Min . T yp. Max. Uni t V(BR)DSS Drain-source Breakdown Voltage ID = 250 µAVGS =0 500 V IDSS Zero G ate Volt age Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating x 0.8 Tc =125 oC 250 1000 µA µA IGSS Gat e-body Leakage Current (VDS =0) VGS = ± 30 V ± 100 nA ON ( ∗) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Uni t VGS(th) Gat e Threshold Voltage VDS =VGS ID = 250 µA 2.25 3 3.75 V RDS(on) Static Drain-source On Resistance VGS = 10V ID =4 A VGS =10V ID =4 A Tc =100 oC 0. 7 0.85 1.7 Ω Ω ID(on ) On Stat e Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 8A DYNAMIC Symbo l Parameter T est Con ditio ns Min . T yp. Max. Uni t gfs ( ∗)Forward Transconductance VDS >ID(on) xRDS(on)max ID =4 A 4.5 6. 5 S Cis s Coss Crss Input Capacit ance Out put Capacitance Reverse T ransf er Capacitance VDS =25 V f = 1 MHz VGS = 0 1200 190 55 1600 250 75 pF pF pF STB8NA50 2/10 |
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