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STB95NF03 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB95NF03
Description  N-CHANNEL 30V - 0.0065 ohm - 95A D짼PAK STripFET??II POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB95NF03 Datasheet(HTML) 1 Page - STMicroelectronics

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March 2003
STB95NF03
N-CHANNEL 30V - 0.0065
Ω - 95A D²PAK
STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.0065 Ω
s
STANDARD THRESHOLD DRIVE
s
100% AVALANCHE TESTED
s
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based
process.
The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
TYPE
VDSS
RDS(on)
ID
STB95NF03
30 V
<0.007
Ω
80 A
1
3
D2PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 47.5A, VDD = 25V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 20
V
ID(∗)
Drain Current (continuous) at TC = 25°C
80
A
ID
Drain Current (continuous) at TC = 100°C
80
A
IDM(•)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3.0
V/ns
EAS (2)
Single Pulse Avalanche Energy
720
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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