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GP10NC60H Datasheet(PDF) 1 Page - STMicroelectronics |
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GP10NC60H Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page 2 April 2007 Rev 3 1/13 13 ■ Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop. Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Internal schematic diagram Features Type VCES VCE(sat) (Max)@ 25°C IC @100°C STGP10NC60H 600V < 2.5V 10A TO-220 1 2 3 STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH™ IGBT www.st.com Order code Part number Marking Package Packaging STGP10NC60H GP10NC60H TO-220 Tube |
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