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STX790A_08 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STX790A_08
Description  Medium current, high performance, low voltage PNP transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX790A
Electrical characteristics
3/10
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = -30 V
VCB = -30 V;
TC = 100 °C
-10
-100
µA
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -4 V
-10
µA
V(BR)CEO
(1)
Collector-emitter
breakdown voltage
(IB = 0)
IC = -10 mA
-30
V
V(BR)CER
(1)
Collector-emitter
breakdown voltage
(RBE = 47 Ω)
IC = -10 mA
-40
V
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = -100 µA
-40
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = -100 µA
-5
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = -0.5 A
IB = -5 mA
IC = -1.2 A
IB = -20 mA
IC = -2 A
IB = -20 mA
IC = -3 A
IB = -100 mA
IC = -3 A
IB = -100 mA
TJ = 100 °C
-0.15
-0.25
-0.5
-0.7
-0.9
V
V
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = -1A
IB = -10mA
-0.8
-1
V
VBE(on)
(1)
Base-emitter on voltage
IC = -1A
VCE = -2V
-0.8
-1
V
hFE
(1)
DC current gain
IC = -10mA
VCE = -2V
IC = -500mA
VCE = -2V
IC = -1A
VCE = -2V
IC = -2A
VCE = -1V
IC = -3A
VCE = -1V
100
100
100
100
90
200
200
160
130
400
400




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