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TPS78001DRVT Datasheet(PDF) 3 Page - Texas Instruments |
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TPS78001DRVT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 27 page  ELECTRICAL CHARACTERISTICS TPS780 Series www.ti.com ....................................................................................................................................................... SBVS083C – JANUARY 2007 – REVISED MAY 2008 Over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(NOM) + 0.5V or 2.2V, whichever is greater; IOUT = 100 µA, V VSET = VEN = VIN, COUT = 1.0µF, fixed or adjustable, unless otherwise noted. Typical values at TJ = +25°C. TPS780 Series PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIN Input voltage range 2.2 5.5 V Nominal TJ = +25°C, VSET = high/low –2 ±1 +2 % VOUT (1) DC output accuracy Over VIN, IOUT, VOUT + 0.5V ≤ VIN ≤ 5.5V, –3.0 ±2.0 +3.0 % temperature 0mA ≤ IOUT ≤ 150mA, VSET = high/low Internal reference(2) VFB TJ = +25°C, VIN = 4.0V, IOUT = 75mA 1.216 V (adjustable version only) Output voltage range(3)(4) VOUT_RANGE VIN = 5.5V, IOUT = 100µA (2) VFB 5.25 V (adjustable version only) ΔVOUT/ΔVIN Line regulation VOUT(NOM) + 0.5V ≤ VIN ≤ 5.5V, IOUT = 5mA –1 +1 % ΔVOUT/ΔIOUT Load regulation 0mA ≤ IOUT ≤ 150mA –2 +2 % VDO Dropout voltage(5) VIN = 95% VOUT(NOM), IOUT = 150mA 250 mV BW = 100Hz to 100kHz, VIN = 2.2V, VN Output noise voltage 86 µV RMS VOUT = 1.2V, IOUT = 1mA VSET high (output VOUT(LOW) VHI 1.2 VIN V selected), or EN high (enabled) VSET low (output VOUT(HIGH) VLO 0 0.4 V selected), or EN low (disabled) ICL Output current limit VOUT = 0.90 × VOUT(NOM) 150 230 400 mA IOUT = 0mA (6) 420 800 nA IGND Ground pin current IOUT = 150mA 5 µA VEN ≤ 0.4V, 2.2V ≤ VIN < 5.5V, ISHDN Shutdown current (IGND) 18 130 nA TJ = –40°C to +100°C IVSET VSET pin current VEN = VVSET = 5.5V 70 nA IEN EN pin current VEN = VVSET = 5.5V 40 nA FB pin current(7) IFB VIN = 5.5V, VOUT = 1.2V, IOUT = 100µA 10 nA (adjustable version only) f = 10Hz 40 dB VIN = 4.3V, PSRR Power-supply rejection ratio VOUT = 3.3V, f = 100Hz 20 dB IOUT = 150mA f = 1kHz 15 dB VOUT transition time (high-to-low) VOUT_LOW = 2.2V, VOUT(HIGH) = 3.3V, tTR(H→L) 800 µs VOUT = 97% × VOUT(HIGH) IOUT = 10mA VOUT transition time (low-to-high) VOUT_HIGH = 3.3V, VOUT(LOW) = 2.2V, tTR(L→H) 800 µs VOUT = 97% × VOUT(LOW) IOUT = 10mA COUT = 1.0µF, VOUT = 10% VOUT(NOM) to tSTR Startup time(8) 500 µs VOUT = 90% VOUT(NOM) IOUT = 150mA, COUT = 1.0µF, VOUT = 2.8V, tSHDN Shutdown time(9) VOUT = 90% VOUT(NOM) to VOUT = 10% 500(10) µs VOUT(NOM) Shutdown, temperature increasing +160 °C TSD Thermal shutdown temperature Reset, temperature decreasing +140 °C TJ Operating junction temperature –40 +125 °C (1) The output voltage for VSET = low/high is programmed at the factory. (2) Adjustable version only. (3) No VSET pin on the adjustable version. (4) No dynamic voltage scaling on the adjustable version. (5) VDO is not measured for devices with VOUT(NOM) < 2.3V because minimum VIN = 2.2V. (6) IGND = 800nA (max) up to +100°C. (7) The TPS78001 FB pin is tied to VOUT. Adjustable version only. (8) Time from VEN = 1.2V to VOUT = 90% (VOUT(NOM)). (9) Time from VEN = 0.4V to VOUT = 10% (VOUT(NOM)). (10) See Shutdown in the Application Information section for more details. Copyright © 2007–2008, Texas Instruments Incorporated Submit Documentation Feedback 3 |
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