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UCC28070PWR Datasheet(PDF) 6 Page - Texas Instruments |
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UCC28070PWR Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 39 page  www.ti.com DEVICE INFORMATION GDB SS RT CAOB GND VCC GDA DMAX 1 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 VAO RDM PKLMT RSYNTH CSA VSENSE VINAC IMO CDR 10 CSB VREF CAOA 11 UCC28070 SLUS794A – NOVEMBER 2007 – REVISED MARCH 2008 ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range −40 °C < T A < 125°C, TJ = TA, VCC = 12 V, GND = 0 V, RRT = 75 kΩ, RDMX = 68.1 k Ω, RRDM = RSYN = 100 kΩ, CCDR = 2.2 nF, CSS = CVREF = 0.1 µF, CVCC = 1 µF, (unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Current Synthesizer VSENSE = 3 V, VINAC = 0 V 2.91 3 3.09 VRSYNTH Regulation voltage VSENSE = 3 V, VINAC = 2.85 V 0.10 0.15 0.20 V Synthesizer disable threshold Measured at RSYNTH (rising) 5 5.25 VINAC input bias current 0.250 0.500 µA Peak Current Limit Peak current limit threshold PKLMT = 3.30 V, measured at CSx (rising) 3.27 3.3 3.33 V Measured between CSx (rising) and GDx Peak current limit propagation delay 60 100 ns (falling) edges PWM Ramp VRMP PWM ramp amplitude 3.8 4.0 4.2 V PWM ramp offset voltage TA = 25°C, RRT = 75 kΩ 0.65 0.7 PWM ramp offset temperature −2 mV/ °C coefficient Gate Drive GDA, GDB output voltage, high, VCC = 20 V, CLOAD = 1 nF 11.5 13 15 clamped V GDA, GDB output voltage, High CLOAD = 1 nF 10 10.5 GDA, GDB output voltage, Low CLOAD = 1 nF 0.2 0.3 Rise time GDx 1 V to 9 V, CLOAD = 1 nF 18 30 ns Fall time GDx 9 V to 1 V, CLOAD = 1 nF 12 25 GDA, GDB output voltage, UVLO VCC = 0 V, IGDA, IGDB = 2.5 mA 0.7 2 V Thermal Shutdown Thermal shutdown threshold 160 °C Thermal shutdown recovery 140 TSSOP-20 Top View, PW Package 6 Submit Documentation Feedback Copyright © 2007–2008, Texas Instruments Incorporated Product Folder Link(s): UCC28070 |
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