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VARACTOR DIODES
SG-950
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
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WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
Microwave Hyperabrupt Series
• High linearity VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 20 V min
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
Total
Total
Total
Model Number
Capacitance
Capacitance
Capacitance
Q min
CT (pF) at –0 V
CT (pF) at –4 V
CT (pF) at –20 V
at –4 V
Common
min
min
max
min
max
(50 MHz)
Single
Cathode
2.7
1.25
1.75
0.43
0.57
1000
GVD30422-001
GVD30422-004
4.2
1.70
2.50
0.52
0.72
850
GVD30432-001
GVD30432-004
6.3
2.20
3.80
0.68
0.96
700
GVD30442-001
GVD30442-004
11.9
3.70
5.50
0.94
1.30
600
GVD30452-001
GVD30452-004
26.0
9.00
11.00
1.90
2.50
400
GVD30462-001
GVD30462-004
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior wide range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
• Low phase noise VCOs
• Phase locked loop VCOs
0.115
± 0.005
2.93
± 0.13
0.038
± 0.003
0.96
± 0.065
0.051
± 0.004
1.3
± 0.1
0.075
± 0.005
1.91
± 0.13
0.091
± 0.008
2.3
± 0.2
0.021
± 0.003
0.53
± 0.08
0.040
± 0.007
1.03
± 0.18
0.007
± 0.003
0.18
± 0.08
0.0047
± 0.0013
0.12
± 0.033
TOP VIEW
(SINGLE)
(COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016
± 0.002
0.41
± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
50.0
10.0
5.0
1.0
0.5
0.3
1
2
3
45 6
10
20
30
REVERSE VOLTAGE
(VOLTS)
2.0
3.0
0.5
GVD30432-001
GVD30452-001
GVD30422-001
CT (pF)
50