STD3NB50

N - CHANNEL 500V - 2.5

Ω - 3A - IPAK/DPAK

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

500

V

Ω)

500

V

Gate-source Voltage

± 30

V

A

1.9

A

•)

Drain Current (pulsed)

12

A

W

Derating Factor

0.4

W/

Peak Diode Recovery voltage slope

4.5

V/ns

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

May 1998

TYPE

STD3NB50

500 V

< 2.8

Ω

3 A

1

3

DPAK

TO-252

(Suffix "T4")

3

2

1

IPAK

TO-251

(Suffix "-1")

1/6