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STD3NB50 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD3NB50 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 6 page STD3NB50 N - CHANNEL 500V - 2.5 Ω - 3A - IPAK/DPAK PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 2.5 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 500 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 o C3 A ID Drain Current (continuous) at Tc = 100 oC 1.9 A IDM( •) Drain Current (pulsed) 12 A Ptot Total Dissipation at Tc = 25 oC50 W Derating Factor 0.4 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1) ISD ≤3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX May 1998 TYPE VDSS RDS(on) ID STD3NB50 500 V < 2.8 Ω 3 A 1 3 DPAK TO-252 (Suffix "T4") 3 2 1 IPAK TO-251 (Suffix "-1") 1/6 |
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