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SDR647CTS1TXV Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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SDR647CTS1TXV Datasheet(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0087C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET SDR64 ___ CT ___ ___ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level │ │ │ │ └ Package S1= SMD1 │ │ │ │ │ │ └ Voltage/Family 3 = 300 V 4 = 400 V 5 = 500 V 6 = 600 V 7 = 700 V SDR643CTS1 thru SDR647CTS1 50 AMP 300-700 Volts 35 nsec Ultra Fast Centertap Rectifier Features: • Ultra Fast Recovery: 25 nsec typical • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Power Surface Mount Package • Ceramic Seals Available • Higher Currents & Voltages Available – Contact Factory • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR643CTS1 SDR644CTS1 SDR645CTS1 SDR646CTS1 SDR647CTS1 VRRM VRWM VR 300 400 500 600 700 Volts Average Rectified Forward Current note 3 (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Io 50 Amps Peak Surge Current note 3 (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM 500 Amps Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, note 3 RθJC 2.00 1.20 ºC/W 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500; contact factory for screening flow. 3/ Both legs tied together *Also available in other packages: TO-254, TO-254Z, TO-257, and 28 Pin CLCC – Consult Factory SMD1 |
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