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STD5NB20 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD5NB20
Description  N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD5NB20 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 100 V
ID =3. 5 A
RG = 4.7
Ω
VGS = 10 V
10
13
13.5
18
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160 V
ID =7 A VGS = 10 V
12
8.5
3
16
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 160 V
ID = 7 A
RG = 4.7
Ω VGS = 10 V
10
8
17
14
11
23
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
5
20
A
A
VSD (
∗)
Forward On Voltage
ISD = 5 A
VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7 A
di/dt = 100 A/
µs
VDD = 50 V
Tj = 150
oC
145
650
9
200
878
12.12
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STD5NB20
3/5


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