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STF42 Datasheet(PDF) 2 Page - STMicroelectronics |
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STF42 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-amb • Thermal Resistance Junction-Ambient Max 96.1 oC/W • Device mounted on a PCB area of 1 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 200 V VCB = 200 V TC = 150 oC VCB = 300 V 10 10 100 nA µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 50 nA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 100 µA 300 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 300 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 100 µA 5V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 30 mA IB = 5 mA 0.6 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 30 mA IB = 5 mA 1.2 V hFE ∗ DC Current Gain IC = 30 mA VCE = 10 V 75 fT Transition Frequency IC = 15 mA VCE = 10 V f = 20 MHz 60 MHz CCBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 6 pF CEBO Emitter-Base Capacitance IC = 0 VEB = 2 V f = 1 MHz 22 pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % STF42 2/4 |
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Similar Description - STF42 |
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