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HC6856NVFAC60 Datasheet(PDF) 7 Page - Honeywell Solid State Electronics Center

Part # HC6856NVFAC60
Description  32K x 8 STATIC RAM
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Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center

HC6856NVFAC60 Datasheet(HTML) 7 Page - Honeywell Solid State Electronics Center

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HC6856
7
Worst Case (3)
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading0 pF, or equivalent capacitive
load of 5 pF for TWLQZ.
(2) Typical operating conditions: VDD=5.0 V, TA=25
°C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55 to 125
°C, post total dose at 25°C.
(4) SER
≤1E-10 u/b-d from -55 to 80°.
(5) TAVAVW= TWLWH + TWHWL
TAVAVW
Write Cycle Time (5)
30
40
60
ns
TWLWH
Write Enable Write Pulse Width
25
35
55
ns
TSLWH
Chip Select to End of Write Time
25
35
55
ns
TDVWH
Data Valid to End of Write Time
20
30
50
ns
TAVWH
Address Valid to End of Write Time
25
35
55
ns
TWHDX
Data Hold Time after End of Write Time
0
0
0
ns
TAVWL
Address Valid Setup to Start of Write Time
0
0
0
ns
TWHAX
Address Valid Hold after End of Write Time
0
0
0
ns
TWLQZ
Write Enable to Output Disable Time
5
0
10
0
10
ns
TWHQX
Write Disable to Output Enable Time
15
5
5
ns
TWHWL
Write Disable to Write Enable Pulse Width
4
5
5
ns
TEHWH
Chip Enable to End of Write Time
25
35
55
ns
Symbol
Parameter
Typical (2)
SER <1E-9 (4)
SER <1E-10
Min
Max
Min
Max
Units
WRITE CYCLE AC TIMING CHARACTERISTICS (1)
ADDRESS
HIGH
IMPEDANCE
DATA OUT
NWE
DATA IN
DATA VALID
TAVAVW
NCS
CE
TAVWH
TWLWH
TAVWL
TWLQZ
TDVWH
TWHQX
TWHDX
TSLWH
TEHWH
TWHAX
TWHWL


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