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STH10NA50FI Datasheet(PDF) 2 Page - STMicroelectronics |
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STH10NA50FI Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 11 page  THERMAL DATA TO-218/TO-247 ISOWATT218 Rthj-case Thermal Resist ance Junct ion-case Max 0.83 2.08 oC/W Rthj-amb Rthc- sink Tl Thermal Resist ance Junct ion-ambient Max Thermal Resist ance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 30 0.1 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Uni t IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1%) 9.6 A EAS Single Pulse Avalanche Energy (st arting Tj =25 oC, ID =IAR,VDD =50 V) 460 mJ EAR Repet itive Avalanche Energy (pulse width limited by Tj max, δ <1%) 16 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 oC, pulse width limited by Tj max, δ <1%) 5.6 A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =250 µAVGS = 0 500 V IDS S Zero Gate Volt age Drain Current (VGS =0) VDS =Max Rating VDS = Max Rating x 0.8 Tc =125 oC 25 250 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 30 V ± 100 nA ON ( ∗) Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS ID =250 µA 2. 25 3 3. 75 V RDS(on) St atic Drain-source On Resist ance VGS =10V ID =5 A 0.7 0.8 Ω ID(on) On St ate Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 10 A DYNAMIC Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS >ID(on) xRDS(on)max ID =45A 4.5 7.4 S Ciss Coss Crss I nput Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS = 0 1350 200 50 1800 270 70 pF pF pF STH10NA50/FI STW10NA50 2/11 |
Similar Part No. - STH10NA50FI |
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