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L6210 Datasheet(PDF) 4 Page - STMicroelectronics |
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L6210 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 8 page Electrical specifications L6210 4/8 2 Electrical specifications 2.1 Absolute maximum ratings 2.2 Thermal data 2.3 Electrical characteristics Note: At forward currents of greater than 1 A, a parasitic current of approximately 10 mA may be collected by adiacent diodes. Table 2. Absolute maximum ratings Symbol Parameter Value Unit IF Repetitive Forward Current Peak 2 A VR Peak Reverse Voltage (per diode) 50 V TAMB Operating Ambient Temperature 70 °C TSTG Storage Temperature Range –55 to +150 °C Table 3. Thermal data Symbol Parameter Min. Typ. Max. Unit RTH J-CASE Thermal Impedance Junction-case 14 °C/W RTH J-AMB Thermal Impedance Junction-ambient without External Heatsink 65 °C/W Table 4. Electrical characteristics (TJ = 25°C unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward Voltage Drop IF = 100 mA 0.65 0.8 V IF = 500 mA 0.8 1 V IF = 1 A 1 1.2 V IL Leakage Current VR = 40 V, TAMB = 25 °C 1 mA |
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